Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

文件：100.63 Kbytes 页数：8 Pages

IRF

BASE STATION ANTENNAS

文件：310.21 Kbytes 页数：2 Pages

pulse

Power MOSFET

文件：159.78 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A

Benefits\nLow Gate Charge Qg results in Simple Drive Requirement\nImproved Gate, Avalanche and dynamic dv/dt Ruggedness\nFully Characterized Capacitance and Avalanche Voltage and CurrentApplications\nSwitch Mode Power Supply ( SMPS )\nUninterruptable Power Supply\nHigh speed power switching

Infineon

英飞凌

萧特基 (Schottky)(.5A 和以上)

Diodes

美台半导体

Outdoor Antenna: Base Station - General

PULSE

普思

包装：盒 类别：RF/IF，射频/中频和 RFID RF 天线 描述：ANTENNA WHIP RADIAL BS-WHP 3.6D

PulseLarsen Antennas

包装：散装 类别：五金件，紧固件，配件 垫圈 - 套管，凸肩 描述：SHOULDER WASHER, NATURAL,.196 IN

Essentra

益升华

包装：散装 类别：五金件，紧固件，配件 垫圈 - 套管，凸肩 描述：SHOULDER WASHER, NATURAL,.219 IN

Essentra

益升华