MATCHED PAIR AND QUAD ASSEMBLIES DIODES

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Audio Power Amplifier

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

文件：83.86 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

文件：461.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

文件：461.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体