首页 >F9610A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1AsynchronousmobilepowerIC | FUMANFine Made Microelectronics Group Co.,Ltd. 富满微富满微电子集团股份有限公司 | FUMAN | ||
1AsynchronousmobilepowerIC | FUMANFine Made Microelectronics Group Co.,Ltd. 富满微富满微电子集团股份有限公司 | FUMAN | ||
HERMETICALLYSEALEDLATCHINGRELAY | HONGFAHongfa Technology 宏发电声厦门宏发电声股份有限公司 | HONGFA | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.8A) Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. •Dynamic | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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