丝印：F7471；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES © Vos=40V o=15A | Rosco

文件：1.95284 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)

SMPS MOSFET Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) • Fully Characterized Avalanche Voltage and Current Applications • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • High Frequency Buck Converters for Computer Processo

文件：214.24 Kbytes 页数：8 Pages

IRF

HEXFET짰Power MOSFET

Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) • Fully Characterized Avalanche Voltage and Current Applications • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • High Frequency Buck Converters for Computer Processor Power • Le

文件：124.36 Kbytes 页数：8 Pages

IRF

N-Channel 40-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Synchronous Rectification • POL, IBC - Secondary Side

文件：1.07137 Mbytes 页数：9 Pages

VBSEMI

微碧半导体