Dual-N Enhancement Mode MOSFET

Features  VDS=60V, ID=5A  RDS(ON)=35mΩ@VGS=10V(Typ.)  RDS(ON)=39mΩ@VGS=4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

文件：1.41907 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

Extra-Small, High-Performance, High-Frequency DrMOS Module

文件：722.54 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

Electronic Two Tone Ringer

Description GL6840A are monolithic integrated circuits designed to replace the mechanical bell in telephone sets, in connection with an electro acoustical converter. The device can drive either directly a piezo ceramic converter(buzzer) or a small loudspeaker. In this case a transformer is needed

文件：87.45 Kbytes 页数：8 Pages

Hynix

海力士

Electronic Two Tone Ringer

Description GL6840A are monolithic integrated circuits designed to replace the mechanical bell in telephone sets, in connection with an electro acoustical converter. The device can drive either directly a piezo ceramic converter(buzzer) or a small loudspeaker. In this case a transformer is needed

文件：87.45 Kbytes 页数：8 Pages

Hynix

海力士