Dual-Channel Low Noise Amplifier 14GHz – 17GHz

Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin

文件：1.45427 Mbytes 页数：15 Pages

RENESAS

瑞萨

Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz

文件：127.39 Kbytes 页数：3 Pages

RENESAS

瑞萨

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD

Renesas Electronics America Inc

P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter

文件：120.58 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 2.5V Specified PowerTrench??MOSFET with Schottky Diode

文件：267.01 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

文件：333.8 Kbytes 页数：4 Pages

GTM

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