MCH6660

ComplementaryDualPowerMOSFET

Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8VDrive •ESDDiode-ProtectedGate •Pb-Free,HalogenFreeandRoHSCompliance •UltrasmallPackageMCPH6(2.0mm×2.1mm×0.85mmt) •NchMOSFETandPchMOSFETareputinMCP

MCH6660

General-PurposeSwitchingDeviceApplications

Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

MCH6660-TL-H

ComplementaryDualPowerMOSFET

Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8VDrive •ESDDiode-ProtectedGate •Pb-Free,HalogenFreeandRoHSCompliance •UltrasmallPackageMCPH6(2.0mm×2.1mm×0.85mmt) •NchMOSFETandPchMOSFETareputinMCP

MCH6660-TL-H

General-PurposeSwitchingDeviceApplications

MCH6660-TL-W

ComplementaryDualPowerMOSFET

Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8VDrive •ESDDiode-ProtectedGate •Pb-Free,HalogenFreeandRoHSCompliance •UltrasmallPackageMCPH6(2.0mm×2.1mm×0.85mmt) •NchMOSFETandPchMOSFETareputinMCP

MPF6660

TMOSSWITCHINGFETTRANSISTORS

MT6660C-UR

3mmVisibleEmitter

MT6660F-UR

RedVisibleEmitter

MT6660T-UR

VisibleEmitter

MTRS6660

PhotoReflector

PeakEmissionWavelength:660nm The660nmreflectivesensorconsistsofa660nmvisibleemitterandhighsensitivityphototransistorinthesamepackage.Theblackmoldedhousingreducestheeffectofexternalambientlight.Customemitter/detectorsareavailable. FEATURES >HighReliability