丝印：F50Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION The SP6200 and SP6201 are CMOS LDOs designed to meet a broad range of applications that require accuracy, speed and ease of use. These LDOs offer extremely low quiescent current which only increases slightly under load, thus providing advantages in ground current performance over bipo

文件：144.42 Kbytes 页数：10 Pages

Sipex

西伯斯

丝印：F50Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

文件：426.37 Kbytes 页数：17 Pages

Sipex

西伯斯

丝印：F50N06Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.18 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：F50N06Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.77 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：F50N06Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.72 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：F50N06Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：812.59 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：F50N06Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.99 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：F50N06Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.45 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：F501DPackage：SOT-23；nullN- Channel Depletion mode MOSFETS

文件：1.61075 Mbytes 页数：6 Pages

PJSEMI

平晶半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：37.37 Kbytes 页数：2 Pages

Polyfet