F50L2G41XA-104BBG2B

3.3V 2 Gbit SPI-NAND Flash Memory

FEATURES Single-levelcell(SLC)technology Organization -Pagesizex1:2176bytes(2048+128bytes) -Blocksize:64pages(128K+8Kbytes) -Devicesize:2Gb(2planes,1024blocksperplane) StandardandextendedSPI-compatibleserialbus interface -Instruction,addresson

F50L2G41XA-104YG2B

3.3V 2 Gbit SPI-NAND Flash Memory

FEATURES Single-levelcell(SLC)technology Organization -Pagesizex1:2176bytes(2048+128bytes) -Blocksize:64pages(128K+8Kbytes) -Devicesize:2Gb(2planes,1024blocksperplane) StandardandextendedSPI-compatibleserialbus interface -Instruction,addresson

F50N06E

N-Channel Enhancement MOSFET

Features VDS=60V,ID=5A RDS(ON)=35mΩ@VGS=10V(Typ.) RDS(ON)=39mΩ@VGS=4.5V(Typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

F50N06LE

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

TheseN-ChannelenhancementmodepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

F51LM

HIGH RELIABILITY FOR LOW COST

FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR

F5-25

Linear Power Supplies Data Sheet

Description Power-Oneproducestheindustry’sbroadestselectionofLinearpowersupplieswithoutputvoltagesfrom5voltsthrough250volts.Ruggedtechnologyandprovendesignmergetocreatequiet,highly-regulated,dependableDCpower. TheLinearpowersuppliesareapprovedtodomesticand

F5-25

Linear Power Supplies Data Sheet

Description Power-Oneproducestheindustry’sbroadestselectionofLinearpowersupplieswithoutputvoltagesfrom5voltsthrough250volts.Ruggedtechnologyandprovendesignmergetocreatequiet,highly-regulated,dependableDCpower. TheLinearpowersuppliesareapprovedtodomesticand

F5268

26GHz 8-Channel, Half-Duplex Transceiver IC

Features ■24.25-27.5GHzoperation(5GNRn258/n261) ■8radiationchannels ■100nstypicalTX/RXmodeswitchingtime ■20nstypicalgainandphasesettlingtime ■1.4°typicalRMSphaseerror ■0.2dBtypicalRMSgainerror ■30.5dBgainattenuationrange ■IntegratedPTAT,PTAT2,andBa

F5268_V01

26GHz 8-Channel, Half-Duplex Transceiver IC

Features ■24.25-27.5GHzoperation(5GNRn258/n261) ■8radiationchannels ■100nstypicalTX/RXmodeswitchingtime ■20nstypicalgainandphasesettlingtime ■1.4°typicalRMSphaseerror ■0.2dBtypicalRMSgainerror ■30.5dBgainattenuationrange ■IntegratedPTAT,PTAT2,andBa

F5305S

P-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100%RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSwitch •LoadSwitchinHighCurrentApplications •DC/DCConverters