F4N60芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
F4N60	文件：1.3059 Mbytes Page：11 Pages	丝印：F4N60；Package：TO-220F；4A 600V N-channel Enhancement Mode Power MOSFET Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. Features ● Fast Switching ● ESD Improved Capability ● 文件：1.3059 Mbytes 页数：11 Pages	WXDH 东海半导体	WXDH
F4N60	文件：1.3059 Mbytes Page：11 Pages	丝印：F4N60；Package：TO-220F；4A 600V N-channel Enhancement Mode Power MOSFET Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. Features ● Fast Switching ● ESD Improved Capability ● 文件：1.3059 Mbytes 页数：11 Pages	WXDH 东海半导体	WXDH
F4N60	文件：225.38 Kbytes Page：5 Pages	600V N-Channel Enhancement Mode MOSFET 文件：225.38 Kbytes 页数：5 Pages	PANJIT 強茂	PANJIT

更多F4N60供应商更新时间2026-10-25 9:31:00