首页 >F44H11G>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPNEPITAXIALPLANARTRANSISTOR Description TheHD44H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHI44H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
NPNEPITAXIALPLANARTRANSISTOR DESCRIPTION TheUTCHJ44H11isdesignedforsuchapplicationsas:series,shuntandswitchingregulators;outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;lowandhighfrequencyinverters/converters;andmanyothers. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHJ44H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage :V(BR)CEO=80V(Min) ·HighDCCurrentGain :hFE=60(Min)@(VCE=1V,IC=2A) ·LowSaturationVoltage- :VCE(sat)=1.0V(Max)@(IC=8A,IB=0.4A) ·ComplementtoTypeKSE45H11 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
GeneralPurposePowerSwitchingApplications GeneralPurposePowerSwitchingApplications •LowCollector-EmitterSaturationVoltage:VCE(sat)=1V(Max.)@8A •FastSwitchingSpeeds •ComplementtoKSE45H | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNEpitaxialSiliconTransistor Description Designedforgeneral-purposepowerandswitching,suchasoutputordriverstagesinapplications. Features •LeadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularKSE44H •FastSwitchingSpeeds •LowCollec | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Leadformedforsurfacemountapplications(NOsuffix) •Straightlead(IPAK,“-I”suffix) •ElectricallysimilartopopularKSE44H •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS • | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNEpitaxialSiliconTransistor Description Designedforgeneral-purposepowerandswitching,suchasoutputordriverstagesinapplications. Features •LeadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularKSE44H •FastSwitchingSpeeds •LowCollec | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplicationsD-PAKforSurfaceMountApplications Description Designedforgeneral-purposepowerandswitching,suchasoutputordriverstagesinapplications. Features •LeadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularKSE44H •FastSwitchingSpeeds •LowCollec | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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