AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

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Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

文件：1.12721 Mbytes 页数：68 Pages

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文件：162.61 Kbytes 页数：1 Pages

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文件：162.61 Kbytes 页数：1 Pages

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文件：162.61 Kbytes 页数：1 Pages

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CONDUCTIVE POLYMER TANTALUM SOLID ELECTROLYTIC CAPACITORS

文件：162.61 Kbytes 页数：1 Pages

NICHICON

尼吉康

CONDUCTIVE POLYMER TANTALUM SOLID ELECTROLYTIC CAPACITORS

文件：162.61 Kbytes 页数：1 Pages

NICHICON

尼吉康

CONDUCTIVE POLYMER TANTALUM SOLID ELECTROLYTIC CAPACITORS

文件：162.61 Kbytes 页数：1 Pages

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尼吉康