PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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POLYFET

Systeme disolement thermique

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HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：245.61 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 2.05V@IC= 6A · Pb-free lead plating, RoHS compliant APPLICATIONS · Motor Controls · SMPS · Inverter

文件：390.44 Kbytes 页数：3 Pages

ISC

无锡固电