PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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POLYFET

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

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HITACHIHitachi Semiconductor

日立日立公司

SUBMINATURE/MULTI-FUNCTION/UNBRACKETED

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ETCList of Unclassifed Manufacturers

未分类制造商

SINGLE-CHANNEL 100 mA POWER SWITCH

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TI

德州仪器