22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regul • 22A, 100V\n• UIS SOA Rating Curve (Single Pulse)\n• Nanosecond Switching Speeds\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

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安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：284.37 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.63 Kbytes 页数：2 Pages

ISC

无锡固电

22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：49.13 Kbytes 页数：6 Pages

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