22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regul • 22A, 100V\n• UIS SOA Rating Curve (Single Pulse)\n• Nanosecond Switching Speeds\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

ONSEMI

安森美半导体

Subminiature Photointerrupter

■ Features 1. Ultra-compact 2. PWB mounting type package 3. High sensing accuracy Slit width ; GP1S21 : 0.8mm GP1S22 : 0.3mm ■ Applications 1. Cameras 2. Floppy disk drives

文件：49.43 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

Polyester Film Capacitors

文件：520.809 Kbytes 页数：2 Pages

CDE

High Capacitance, High Voltage

文件：74.43 Kbytes 页数：3 Pages

CDE