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KGF16N05D

N-Channel5.5VDualPowerMOSFET

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

Intersil

Intersil Corporation

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

RFD16N05

60VN-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

RFD16N05LSM

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

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