| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
650VN-ChannelMOSFET | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Silicon650VN-ChannelMOS | NIUHANG Dongguan City Niuhang Electronics Co.LTD | NIUHANG | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
650VN-ChannelEnhancementModeMOSFET FEATURES •12A,650V,RDS(ON)=0.8Ω@VGS=10V,ID=6.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
650VN-ChannelEnhancementModeMOSFET FEATURES •12A,650V,RDS(ON)=0.8Ω@VGS=10V,ID=6.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 赛恩半导体深圳市赛恩半导体有限公司 | SISEMIC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Ser | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Ser | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
49300 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220SIS |
55000 |
绝对原装正品假一罚十! |
询价 | ||
T |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
T |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
DONGHAI |
23+ |
TO-220F |
80000 |
原装正品,一级代理 |
询价 | ||
东海半导体 |
23+ |
NA |
845 |
MOSFET |
询价 | ||
晶导微电子 |
23+ |
NA |
150 |
现货!就到京北通宇商城 |
询价 | ||
T |
23+ |
TO-220F |
8400 |
专注配单,只做原装进口现货 |
询价 | ||
VBSEMI |
19+ |
TO-220SIS |
29600 |
绝对原装现货,价格优势! |
询价 | ||
T |
23+ |
TO-220F |
8400 |
专注配单,只做原装进口现货 |
询价 |
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