零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
LowPowerRTCwithBatteryBackedSRAMandEventDetection LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LowPowerRTCwithBatteryBacked LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | Intersil Intersil Corporation | Intersil | ||
LowPowerRTCwithBatteryBackedSRAMandEventDetection LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelSiliconPowerMOS-FET N-CHANNELSILICONPOWERMOS-FET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
LowFrequencyPowerAmplifier LowFrequencyPowerAmplifier •LowCollector-EmitterSaturationVoltage •ComplementtoKSB906 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.7V(Max)@IC=3A ·ComplementtoKSB906 APPLICATIONS ·Lowfrequencyamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
150MHz,250V/ms,A4OperationalAmplifier | LINERLinear Technology 凌力尔特凌特半导体 | LINER |
详细参数
- 型号:
F1221
- 制造商:
POLYFET
- 制造商全称:
Polyfet RF Devices
- 功能描述:
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
POLYFET |
23+ |
高频管 |
350 |
专营高频管模块,全新原装! |
询价 | ||
POLYFET |
24+ |
155 |
现货供应 |
询价 | |||
POLYFET |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
MIT |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
TI |
23+ |
QFN-32 |
28108 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
LED |
23+ |
2013+ |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
LED |
23+ |
2013+ |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
MORNSUN |
24+ |
DC-DC |
35200 |
一级代理/放心采购 |
询价 | ||
MONRSUN |
1822+ |
DIP |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
MONRSUN |
2447 |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
相关规格书
更多- F1222
- F12237_OSLO-CLUSTER-W
- F122450NC3B
- F122450NC5B
- F122450NC8B
- F122450NC9B
- F1224XES-2W
- F1225
- F1225PFV28--GRZ
- F122600QC3B
- F122600QC5B
- F122600QC8B
- F122600QC9B
- F12-2850
- F12-2850-C2-B
- F122K47S3NP63K7R
- F-122X
- F-1230
- F1230PFV28--GRK
- F12355-000
- F1235PFV18--GRZ
- F1238E12B1+6-FSR
- F124
- F12410007
- F12410159
- F12410163
- F12410271
- F12420038
- F124MB
- F-124X
- F12-500
- F12-500-C2-B
- F1250AA03
- F1250AA10
- F1250BB01
- F1250BB06
- F1250CA03
- F1250CA10
- F1250T
- F1250T-RP
- F125600
- F1257
- F1257WV-10P-T
- F1257WV-11P-T
- F1257WV-13P-T
相关库存
更多- F12237 OSLO-CLUSTER-W-OSL
- F122450CC9B
- F122450NC3D
- F122450NC5D
- F122450NC8D
- F122450NC9D
- F1224XMD-1W
- F1225PFV18--GRQ
- F12-25R12KT4G
- F122600QC3D
- F122600QC5D
- F122600QC8D
- F122600QC9D
- F12-2850-C2
- F122K39S3NN63J5R
- F122K59S3NR63K0R
- F123
- F1230PFV18--GRZ
- F12338-000
- F1235PFU28--GRK
- F12-35R12KT4G
- F1238E12B1-FHR
- F1240
- F12410145
- F12410161
- F12410267
- F12410338
- F12420053
- F124NB
- F125
- F12-500-C2
- F1250AA01
- F1250AA06
- F1250AA20
- F1250BB03
- F1250BB10
- F1250CA06
- F1250DD20
- F1250TRP
- F1251T
- F125600-B
- F1257WV-10P
- F1257WV-11P
- F1257WV-13P
- F1257WV-14P