PESD3V3L4UG

Marking：F05；Package：SOT-353；BI-DIRECTIONAL TVS DIODE ARRAY FOR ESD AND LATCH-UP PROTECTION

Features Lowleakagecurrent Operatingvoltage:3.3V Lowclampingvoltage JEDECSOT-353package Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) RoHSCompliant Applications

SD3.3V35T-4L

Marking：F05；Package：SOT-353；BI-DIRECTIONAL TVS DIODE ARRAY FOR ESD AND LATCH-UP PROTECTION

Features Lowleakagecurrent Operatingvoltage:3.3V Lowclampingvoltage JEDECSOT-353package Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) RoHSCompliant Applications Peri

XC7SH02GV

Marking：f02；Package：SOT753；2-input NOR gate

1.Generaldescription XC7SH02isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputNORfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

XC7SH04GV

Marking：f04；Package：SOT753；Inverter

1.Generaldescription XC7SH04isahigh-speedSi-gateCMOSdevice.Itprovidesaninvertingbuffer. 2.Featuresandbenefits •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E

XC7SH08GV

Marking：f08；Package：SOT753；2-input AND gate

1.Generaldescription XC7SH08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

ASMF05L

Marking：F05；Package：SOT-353；4-Line TVS Array

ASMF05R

Marking：F05R；Package：SOT-353；4-Line TVS Array

DTD123TC

Marking：F02；Package：SOT-23；500mA/40V Digital transistor

DTD123TK

Marking：F02；Package：SOT-346；NPN 500mA 40V Digital Transistors

DTD123TK

Marking：F02；Package：SOT-346；500mA / 40V Digital transistors (with built-in resistors)