FDN304P

SOT-23Plastic-EncapsulateMOSFETS

FEATURE ●TrenchFETPowerMOSFET ●Supperhighdensitycelldesign

FDN304P

P-ChannelMOSFET

Features –2.4A,–20V.RDS(ON)=0.052Ω@VGS=–4.5V RDS(ON)=0.070Ω@VGS=–2.5V RDS(ON)=0.100Ω@VGS=–1.8V Fastswitchingspeed Highperformancetrenchtechnologyforextremely lowRDS(ON) SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23

FDN304P-NL

P-Channel30V(D-S)MOSFET

FDN304PZ

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–2.4A,–20V.RDS(ON)=52mW@VGS=–4.5V RDS(ON)=70mW@VGS=–2.5V

FDN304PZ-NL

P-Channel30V(D-S)MOSFET

FDV304

DigitalFET,P-Channel

FDV304P

DigitalFET,P-Channel

FDV304P

P-ChannelEnhancementMOSFET

■Features ●VDS(V)=-30V ●ID=-4.2A(VGS=-10V) ●RDS(ON)

FDV304P

P-ChannelEnhancementMOSFET

Features VDS(V)=-30V ID=-4.2A(VGS=-10V) RDS(ON)

FDV304P-NL

P-Channel20-V(D-S)MOSFET