FDN304P-NL

P-Channel30V(D-S)MOSFET

FDN304PZ

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–2.4A,–20V.RDS(ON)=52mW@VGS=–4.5V RDS(ON)=70mW@VGS=–2.5V

FDN304PZ-NL

P-Channel30V(D-S)MOSFET

FDV304

DigitalFET,P-Channel

FDV304P

DigitalFET,P-Channel

FDV304P

P-ChannelEnhancementMOSFET

■Features ●VDS(V)=-30V ●ID=-4.2A(VGS=-10V) ●RDS(ON)

FDV304P

P-ChannelEnhancementMOSFET

Features VDS(V)=-30V ID=-4.2A(VGS=-10V) RDS(ON)

FDV304P-NL

P-Channel20-V(D-S)MOSFET

FFM304

SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes)

FFM304

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features •Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Highcurrentcapability. •Fastswitchi