High voltage gate driver IC

The EVAL_1ED020I12-B2 contains two IGBT gate drivers 1ED020I12-B2 in a half bridge configuration and an IGBT module FS25R12W1T4_B11 where only two IGBTs are connected. The evaluation board provides the following main features  Galvanic isolation by the coreless transformer technology of the In

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3300 W 54 V bi-directional phase-shift fullbridge with 600 V CoolMOS CFD7 and XMC

Scope and purpose This document introduces a complete Infineon Technologies AG system solution for a 3300 W bi-directional DC-DC converter that achieves 98 percent efficiency in buck mode and 97 percent in boost mode. The EVAL_3K3W_BIDI_PSFB board is a DC-DC stage with telecom-level output real

文件：4.68189 Mbytes 页数：44 Pages

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3300 W bridgeless totem-pole PFC with CoolSiC™, CoolMOS™, and XMC™ digital control

Summary of Features SiC-based totem-pole PFC Highest eff iciency with CoolMOS™ andCoolSiC™ SMD solution for high power density Digital control enabled by XMC1402

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DC to 18 GHz, Ultra Wideband, Dual Rank, 4 GSPS Track-and-Hold Amplifier

FEATURES 18 GHz input sampling bandwidth (1 V p-p full-scale) 4 GSPS maximum sampling rate 67 dB SFDR at 4 GHz and 0.5 V p-p input and CLK = 1 GSPS) 56 dB SFDR at 4 GHz and 1 V p-p input and CLK = 1 GSPS) Direct coupled input/output Ultra clean output waveforms, minimal glitching ≥65 dB hol

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GaAs, MMIC, SPDT Switch, 10 kHz to 3 GHz

GENERAL DESCRIPTION The HMC221B is a single-pole, double-throw (SPDT) switch specified from 10 kHz to 3 GHz in a 6-lead SOT-23 plastic package. This switch offers a very low insertion loss of less than 0.8 dB up to 3 GHz and is well suited for receiver and filter switching applications that requi

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Cellular infrastructure

GENERAL DESCRIPTION The HMC832 is a 3.3 V, high performance, wideband, fractional-N, phase-locked loop (PLL) that features an integrated voltage controlled oscillator (VCO) with a fundamental frequency of 1500 MHz to 3000 MHz, and an integrated VCO output divider (divide by 1/2/4/6/…60/62), that

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Dual-channel 12-bit 40Msps 215mW A/D converter

Features ■ Low power consumption: 215 mW@40 Msps ■ Single supply voltage: 2.5 V ■ Independent supply for CMOS output stage with 2.5 V/3.3 V capability ■ SFDR = -75 dBc @ Fin = 10 MHz ■ 1GHz analog bandwidth track-and-hold ■ Common clocking between channels ■ Dual simultaneous sample and ho

文件：452.03 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

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Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

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Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

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