FDM606P

P-Channel1.8VLogicLevelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportable

FG606

6.0AmpMINIATUREPLASTICSILICONRECTIFIERSLOWCOSTLOWLEAKAGE

FGBU606

6.0AUITRASOFTRECOVERYBRIDGE

FR606

6.0AMPS.FASTRECOVERYRECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT6.0Amperes FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

FR606

6.0AFASTRECOVERYRECTIFIER

Features ●DiffusedJunction ●LowForwardVoltageDrop ●HighCurrentCapability ●HighReliability ●HighSurgeCurrentCapability

FR606

FASTRECOVERYRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT6.0Amperes)

FR606

6.0AMPFASTRECOVERYRECTIFIERS

Features •Axialleadtypedevicesforthroughholedesign. •Highcurrentcapability. •Fastswitchingforhighefficiency. •Highsurgecapability. •Siliconrubbercoatingchipjunction. •Lead-freepartsmeetRoHSrequirments. •Suffix-HindicatesHalogen-freeparts,ex.FR601-H.

FR606

FASTRECOVERYRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-6.0Amperes Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Fastswitchingforhighefficiency ●Constructionutilizesvoid-freemoldedplastictechnique ●6.0ampereoperationatTA=75withn

FR606

6AmpFastRecoveryRectifier50to1000Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowForwardVoltageDrop •HighCurren

FR606

6.0AFASTRECOVERYDIODE