3300 W bridgeless totem-pole PFC with CoolSiC™, CoolMOS™, and XMC™ digital control

Summary of Features SiC-based totem-pole PFC Highest eff iciency with CoolMOS™ andCoolSiC™ SMD solution for high power density Digital control enabled by XMC1402

文件：677.37 Kbytes 页数：9 Pages

Infineon

英飞凌

DC to 18 GHz, Ultra Wideband, Dual Rank, 4 GSPS Track-and-Hold Amplifier

FEATURES 18 GHz input sampling bandwidth (1 V p-p full-scale) 4 GSPS maximum sampling rate 67 dB SFDR at 4 GHz and 0.5 V p-p input and CLK = 1 GSPS) 56 dB SFDR at 4 GHz and 1 V p-p input and CLK = 1 GSPS) Direct coupled input/output Ultra clean output waveforms, minimal glitching ≥65 dB hol

文件：496.3 Kbytes 页数：18 Pages

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亚德诺

GaAs, MMIC, SPDT Switch, 10 kHz to 3 GHz

GENERAL DESCRIPTION The HMC221B is a single-pole, double-throw (SPDT) switch specified from 10 kHz to 3 GHz in a 6-lead SOT-23 plastic package. This switch offers a very low insertion loss of less than 0.8 dB up to 3 GHz and is well suited for receiver and filter switching applications that requi

文件：265.46 Kbytes 页数：9 Pages

AD

亚德诺

Cellular infrastructure

GENERAL DESCRIPTION The HMC832 is a 3.3 V, high performance, wideband, fractional-N, phase-locked loop (PLL) that features an integrated voltage controlled oscillator (VCO) with a fundamental frequency of 1500 MHz to 3000 MHz, and an integrated VCO output divider (divide by 1/2/4/6/…60/62), that

文件：1.17008 Mbytes 页数：49 Pages

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亚德诺

Dual-channel 12-bit 40Msps 215mW A/D converter

Features ■ Low power consumption: 215 mW@40 Msps ■ Single supply voltage: 2.5 V ■ Independent supply for CMOS output stage with 2.5 V/3.3 V capability ■ SFDR = -75 dBc @ Fin = 10 MHz ■ 1GHz analog bandwidth track-and-hold ■ Common clocking between channels ■ Dual simultaneous sample and ho

文件：452.03 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

Infineon

英飞凌

Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

Infineon

英飞凌

Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

Infineon

英飞凌

Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

Infineon

英飞凌

EiceDRIVER™ F3 Enhanced (1ED332x) – Single- channel isolated gate driver family with short-circuit protection

Features  For up to 2300 V IGBTs, SiC and Si MOSFETs  +6 A / -8.5 A typical sinking and sourcing peak output current  Precise VCEsat detection (DESAT) with fault output  Soft turn-off after desaturation detection  Active Miller Clamp  40 V absolute maximum output supply voltage  85 n

文件：1.79535 Mbytes 页数：8 Pages

Infineon

英飞凌