Low EMI, 2.8-W Mono Filterless Class-D Audio Power Amplifier with Auto-Recovery

文件：155.66 Kbytes 页数：1 Pages

EUTECHEutech Microelectronics Inc

德信科技德信科技股份有限公司

Rubber Push-In Bumpers

文件：98.86 Kbytes 页数：1 Pages

HEYCO

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS(on)=12mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching tf=60ns typ.

文件：30.31 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 12 mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching tf = 60 ns typ.

文件：63.29 Kbytes 页数：5 Pages

RENESAS

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