零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
5V/1ASynchronousBoostwith1ALinearChargerforPowerBank | ETAETA SOLUTIONS CO. LIMITED 钰泰半导体钰泰半导体股份有限公司 | ETA | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.50ohm,Id=-11A) VDSS=-200V RDS(on)=0.50Ohm ID=-11A | IRF International Rectifier | IRF | ||
11A,200V,0.500Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicon-gatepowerfield-effecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinform | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HexfetPowerMosfet
| IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.50ohm,Id=-11A)
| IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | IRF International Rectifier | IRF | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ETEK |
19+ |
DFN10 |
15000 |
ETEK原装/一站式配单 |
询价 | ||
ETEK |
1702+ |
UDFN6 |
30000 |
原装正品现货,可开发票,假一赔十 |
询价 | ||
ETEK/力芯微 |
21+ |
WLCSP-6 |
12000 |
只做原装,假一罚十价格优 |
询价 | ||
一级代理 |
23+ |
N/A |
8000 |
只做原装现货 |
询价 | ||
一级代理 |
23+ |
N/A |
7000 |
询价 | |||
ETEK |
19+ |
CSP20 |
7100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ETEK |
23+ |
CSP20 |
10000 |
原装正品现货 |
询价 | ||
HAR |
23+ |
50000 |
全新原装正品现货,支持订货 |
询价 | |||
HAR |
68900 |
原包原标签100%进口原装常备现货! |
询价 | ||||
HAR |
23+ |
NA/ |
3260 |
原装现货,当天可交货,原型号开票 |
询价 |
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