Package：轴向；包装：散装 类别：电阻器 通孔式电阻器 描述：RESISTOR FUSING LEADED

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

文件：160.7 Kbytes 页数：6 Pages

TOSHIBA

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

Relay Drive, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) (VGS = −10 V) ● High forward transfer admittance: |Yfs| = 5.0 S (typ.) ● Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode: Vth = −0.8

文件：253.7 Kbytes 页数：6 Pages

TOSHIBA

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P-Channel 4 0 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

文件：976.18 Kbytes 页数：7 Pages

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