Type ER/ERV Series

文件：202.25 Kbytes 页数：3 Pages

MACOM

Type ER/ERV Series

文件：202.25 Kbytes 页数：3 Pages

MACOM

Type ER/ERV Series

文件：202.25 Kbytes 页数：3 Pages

MACOM

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

DESCRIPTION The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between t

文件：421.77 Kbytes 页数：43 Pages

TOSHIBA

东芝