T1/CEPT/ISDN-PRI Interface Transformers

文件：54.63 Kbytes 页数：1 Pages

PCA

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：31.51 Kbytes 页数：2 Pages

Polyfet

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

文件：90.16 Kbytes 页数：5 Pages

PETERMANN

Complementary PowerTrench짰 MOSFET N-channel: 20 V, 3.8 A, 66 m廓 P-channel: -20 V, -2.6 A, 142 m廓

General Description This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. T

文件：276.21 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司