HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

文件：90.16 Kbytes 页数：5 Pages

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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Complementary PowerTrench짰 MOSFET N-channel: 20 V, 3.8 A, 66 m廓 P-channel: -20 V, -2.6 A, 142 m廓

General Description This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. T

文件：276.21 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MOSFET - Complementary, POWERTRENCH

文件：316.49 Kbytes 页数：12 Pages

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Heyco Rubber Grommets

文件：81.31 Kbytes 页数：2 Pages

etc2List of Unclassifed Manufacturers

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