N-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件：57.21 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ONSEMI

安森美半导体

High-power GaAs FET (small signal gain stage)

文件：110.23 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

L & S BAND GaAs FET

文件：47.05 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES ● High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm ● High power gain Gp=20dB(TYP.) @f=1.9GHz ● High power added efficiency hadd=45(TYP.) @f=1.9GHz,Pin=8dBm ● He

文件：86.85 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机