| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AComparisonoftheINS8250,NS16450andNS16550AFSeriesofUARTs | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
AComparisonoftheINS8250,NS16450andNS16550AFSeriesofUARTs | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
PC16450C/NS16450,PC8250A/INS8250AUNIVERSALASYNCHRONOUSRECEIVER/TRANSMITTER | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
AComparisonoftheINS8250,NS16450andNS16550AFSeriesofUARTs | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
PC16450C/NS16450,PC8250A/INS8250AUNIVERSALASYNCHRONOUSRECEIVER/TRANSMITTER | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffect | IRF International Rectifier | IRF | ||
RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeen | IRF International Rectifier | IRF | ||
RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeen | IRF International Rectifier | IRF | ||
RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(TO-254AATabless) | IRF International Rectifier | IRF | ||
TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.10ohm,Id=26A) 200Volt,0.10Ω,MEGARADHARDHEXFET InternationalRectifier’sMEGARADHARDtechnologyHEXFETpowerMOSFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas1x106Rads(Si).Underidenticalpre-andpost-radiationtestcondi | IRF International Rectifier | IRF |
详细参数
- 型号：
EN8250B
- 制造商：
SANYO
- 制造商全称：
Sanyo Semicon Device
- 功能描述：
High-Voltage, High-Speed Switching Applications
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL |
24+ |
PLCC |
11000 |
询价 | |||
INTEL |
0638+ |
PLCC-44 |
1789 |
全新原装现货100真实自己公司 |
询价 | ||
INTEL |
23+ |
PLCC |
1251 |
特价库存 |
询价 | ||
intel |
23+ |
PLCC-44 |
5000 |
原装正品,假一罚十 |
询价 | ||
INTEL |
19+ |
PLCC |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
INTEL |
22+ |
PLCC |
2000 |
进口原装!现货库存 |
询价 | ||
INTEL |
23+ |
PLCC-44 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
INTEL |
25+23+ |
PLCC44 |
19924 |
绝对原装正品全新进口深圳现货 |
询价 | ||
INTEL |
21+ |
PLCC-44 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
INTEL |
24+ |
PLCC44 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
相关规格书
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