Bipolar Transistor -30V, -3A, Low VCE(sat), PNP Single CPH6

Features • Adoption of MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers, la

文件：530.01 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件：651.84 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

文件：355.42 Kbytes 页数：4 Pages

ZETEX

Switching Transistor

Features ● 625mW power dissipation. ● IC CONT 2.5A. ● IC up to 10A peak pulse current. ● Excellent hfe characteristics up to 10A (pulsed). ● Extremely low saturation voltage e.g. 10mV typ.. ● Exhibits extremely low equivalent on-resistance; RCE(sat) .

文件：37.87 Kbytes 页数：2 Pages

KEXIN

科信电子

SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

Features • BVCEO > -12V • IC = -2.5A Continuous Collector Current • ICM = -10A Peak Pulse Current • Low Saturation Voltage E.g. -17mV Max @ IC = -100mA. • RCE(sat) = 72mΩ at 2.5A for a low equivalent on-resistance • 625mW power dissipation • hFE characterised up to -10A for high current gai

文件：440.66 Kbytes 页数：4 Pages

DIODES

美台半导体