EN6632A

20W 2-Channel BTL Power Amplifier

FDD6632

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)

FDD6632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDD6632

N-ChannelLogicLevelUltraFET짰TrenchPowerMOSFET30V,9A,70m?

FDD6632

N-ChannelLogicLevelUltraFETTrenchPowerMOSFET30V,9A,90m?

GeneralDescription ThisdeviceemploysanewadvancedtrenchMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance.Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfreque

FL6632

Primary-Side-RegulatedLEDDriver

FL6632MX

Primary-Side-RegulatedLEDDriver

MAX6632

12-BitSignDigitalTemperatureSensorswithSerialInterface

GeneralDescription TheMAX6629–MAX6632arelocaldigitaltemperaturesensorswithanSPI™-compatibleserialinterface.Thetemperatureisconvertedtoa12-bit+signwordwitharesolutionof0.0625°C/LSB.Anextendedtemperaturerangeprovidesusefulreadingsupto+150°C. Features ♦LowPow

MAX6632

MAX6629EvaluationKit

MAX6632

12-BitSignDigitalTemperatureSensorswithSerialInterface