Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applications • Relay drivers, l

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ONSEMI

安森美半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

文件：133.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS IN P

文件：158.36 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

文件：133.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体