Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

文件：634.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Circular Beam Low Operating Current

文件：107.49 Kbytes 页数：5 Pages

OPNEXT

IRLML6344

Features VDS (V) = 30V RDS(ON) 29m (VGS = 4.5V) RDS(ON) 37m (VGS = 2.5V) Application(s) Load/ System Switch

文件：392.93 Kbytes 页数：8 Pages

UMW

友台半导体

Load/ System Switch

Features VDS (V) = 30V RDS(ON)

文件：442.86 Kbytes 页数：8 Pages

UMW

友台半导体