4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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4 Megabit (512K x 8-bit) Flash Memory

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4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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未分类制造商

4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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未分类制造商

4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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未分类制造商

4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

ETCList of Unclassifed Manufacturers

未分类制造商