4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

ETCList of Unclassifed Manufacturers

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4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

GENERAL DESCRIPTION The MX29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and

文件：592.2 Kbytes 页数：40 Pages

MCNIX

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4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era

文件：446.08 Kbytes 页数：33 Pages

AMD

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4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era

文件：446.08 Kbytes 页数：33 Pages

AMD

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