4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

GENERAL DESCRIPTION The MX29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and

文件：592.2 Kbytes 页数：40 Pages

MCNIX

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4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era

文件：446.08 Kbytes 页数：33 Pages

AMD

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4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era

文件：446.08 Kbytes 页数：33 Pages

AMD

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