512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

文件：429.33 Kbytes 页数：35 Pages

EON

宜扬科技