8Mega x 16bits SDRAM

Overview The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM

文件：662.81 Kbytes 页数：48 Pages

ETRON

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8Mega x 16bits SDRAM

Overview The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM

文件：662.81 Kbytes 页数：48 Pages

ETRON

钰创科技

8Mega x 16bits SDRAM

Overview The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM

文件：662.81 Kbytes 页数：48 Pages

ETRON

钰创科技

8Mega x 16bits SDRAM

Overview The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM

文件：662.81 Kbytes 页数：48 Pages

ETRON

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8M x 16 bit Synchronous DRAM (SDRAM)

文件：460.26 Kbytes 页数：53 Pages

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8Mega x 16 Synchronous DRAM (SDRAM)

文件：1.046569 Mbytes 页数：73 Pages

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8Mega x 16 Synchronous DRAM (SDRAM)

文件：1.046569 Mbytes 页数：73 Pages

ETRON

钰创科技

8Mega x 16 Synchronous DRAM (SDRAM)

文件：1.046569 Mbytes 页数：73 Pages

ETRON

钰创科技

8Mega x 16 Synchronous DRAM (SDRAM)

文件：1.046569 Mbytes 页数：73 Pages

ETRON

钰创科技

Specialty DRAM-SDRAM

EtronTech

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