8Mega x 16 Synchronous DRAM (SDRAM)

Overview\nThe EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally\nconfigured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the\npositive edge of the clock signal, CLK). Read and write accesses to the SDRAM are bur • Fastaccess time from clock:5/5.4 ns\n• Fast clock rate: 166/143 MHz\n• Fully synchronous operation\n• Internal pipelined architecture\n• 2M word x 16-bit x 4-bank\n• Programmable Mode registers\n- CAS# Latency: 2, or 3\n- Burst Length: 1, 2, 4, 8, or full page\n- Burst Type: interleaved or linear ;

EtronTech

钰创科技

8Mega x 16 Synchronous DRAM (SDRAM)

文件：1.046569 Mbytes 页数：73 Pages

ETRON

钰创科技

8Mega x 16 Synchronous DRAM (SDRAM)

文件：1.046569 Mbytes 页数：73 Pages

ETRON

钰创科技

TSOP

ETRONTEC

上传：富凯科技(深圳）有限公司

TSOP54

ETRONTECH

上传：深圳硅原半导体有限公司