EM636327数据手册EtronTech中文资料规格书

描述 Description

Overview
The EM636327 SGRAM is a high-speed CMOS synchronous graphics DRAM containing 16 Mbits. It is internally configured as a dual 256K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 256K x 32 bit banks is organized as 1024 rows by 256 columns by 32 bits. Read and write accesses to the SGRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

特性 Features

· Fast access time from clock: 5/5/5.5/6.5/7.5 ns
· Fast clock rate: 183/166/143/125/100 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Dual internal banks(256K x 32-bit x 2-bank)
· Programmable Mode and Special Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst-Read-Single-Write
   - Load Color or Mask register
· Burst stop function
· Individual byte controlled by DQM0-3
· Block write and write-per-bit capability
· Auto Refresh and Self Refresh
· 2048 refresh cycles/32ms
· Single +3.3V±0.3V power supply
· Interface: LVTTL
· JEDEC 100-pin Plastic package
   -QFP (body thickness=2.8mm)
   -TQFP1.4 (body thickness=1.4mm)
   -TQFP1.0 (body thickness=1.0mm)