EM636165VE数据手册EtronTech中文资料规格书

描述 Description

The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K x 16 bit DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit bank is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.\r
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The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications.

特性 Features

• Fast access time: 4.5/5/5/5.5/6.5/7.5 ns\r
• Fast clock rate: 200/183/166/143/125/100 MHz\r
• Self refresh mode: standard and low power\r
• Fully synchronous operation\r
• Internal pipelined architecture\r
• 512K x 16 bit x 2-bank\r
• Programmable Mode registers\r
- CAS# Latency: 1, 2, or 3\r
- Burst Length: 1, 2, 4, 8, or full page\r
- Burst Type: interleaved or linear burst\r
- Burst stop function\r
• Individual byte controlled by LDQM and UDQM\r
• Auto Refresh and Self Refresh\r
• 4096 refresh cycles/64ms\r
• CKE power down mode\r
• Single +3.3V±0.3V power supply\r
• Interface: LVTTL\r
• 50-pin 400 mil plastic TSOP II package\r
• 60-Ball, 6.4 mm x 10.1 mm VFBGA package\r
(Max total package height=1.0 mm)