1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

文件：399.75 Kbytes 页数：30 Pages

EMC

义隆电子

512 K (64K x 8) Bits Serial Flash Memory

General Description The EM25LV512 is a 512K bits Flash memory organized as 64K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the P

文件：394.35 Kbytes 页数：30 Pages

EMC

义隆电子