EM25LV010-33RMS中文资料义隆电子数据手册PDF规格书

General Description

The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM25LV010 conforms to SPI Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data in, and serial data out) that support high-speed serial data transfers of up to 33MHz. The Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control.

特性 Features

■ Single Power Supply

• Full voltage range from 2.7 to 3.6 volts for both read and write operations

• Regulated voltage range: 3.0 to 3.6 volts for both read and write operations

■ Small block Erase Capability Block: Uniform 32K bytes

■ Clock Rate

• 33MHz (Maximum)

■ Power Consumption

• Active Current: 4mA (Typical)

• Power-down Mode Standby current: 1µA (Typical)

■ Page Program Features

• Up to 256 Bytes in 2ms (Typical)

■ Erase Features

• Block-Erase Time: 40ms (Typical)

• Chip-Erase Time: 40ms (Typical)

■ Automatic Write Timing

• Internal VPP Generation

■ SPI Bus Compatible Serial Interface

■ High Reliability:

• Endurance cycles: 100K (Typical)

• Data retention: 10 years

■ Package Option

• 8-lead-SO (150 mil)