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IRFF9130

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFNJ9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

IRFP9130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS9130

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFY9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY9130C

P-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY9130C

POWERMOSFETTHRU-HOLE(TO-257AA)100V,P-CHANNELHEXFET짰MOSFETTECHNOLOGY

PartNumberRDS(on)IDEyelets IRFY9130C0.3Ω-11.2ACeramic IRFY9130CM0.3Ω-11.2ACeramic HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY9130C

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY9130CM

POWERMOSFETTHRU-HOLE(TO-257AA)100V,P-CHANNELHEXFET짰MOSFETTECHNOLOGY

PartNumberRDS(on)IDEyelets IRFY9130C0.3Ω-11.2ACeramic IRFY9130CM0.3Ω-11.2ACeramic HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY9130CM

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.3ohm,Id=-11.2A)

PartNumberRDS(on)IDEyelets IRFY9130C0.3Ω-11.2ACeramic IRFY9130CM0.3Ω-11.2ACeramic HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY9130M

P-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRH9130

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AA)

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AA) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchar

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRH9130

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHE9130

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHE9130

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(LCC-18)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHF9130

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHF9130

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHM9130

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
ELM
16+
SOT-89
10000
进口原装现货/价格优势!
询价
ELM
2008++
SOT-89
6200
新进库存/原装
询价
23+
7300
专注配单,只做原装进口现货
询价
ELM-榆木科技
24+25+/26+27+
SOT-89-3
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
23+
7300
专注配单,只做原装进口现货
询价
ELM
2016+
SOT89
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ELM榆木
1742+
SOT89-3
98215
只要网上有绝对有货!只做原装正品!
询价
ELM
1833+
SOT89
1000
原装现货!天天特价!随时可以货!
询价
ELM
22+
SOT-89
20000
保证原装正品,假一陪十
询价
ELM
22+
SOT-89
100000
代理渠道/只做原装/可含税
询价
更多ELM9130R-S供应商 更新时间2024-5-30 8:30:00