EFC4K110NUZTDG数据手册分立半导体产品的晶体管-FETMOSFET-阵列规格书PDF

描述 Description

EFC4K110NUZTDG features a ultra low on−state resistance and high current with small and thin CSP package. It is best suited for 1−2 Cells lithium−ion battery protection circuit.

特性 Features

• Low Rss(on)
• Low power consumption
• Small size and narrow width
• It can be mounted on narrow width and small area board
• No latch up phenomenon
• High durability when abnormal high voltage input
• Low Gate Charge
• Ease of drive, faster turn-on
• 2kV ESD HBM
• Common Drain Type
• ESD Diode-protected Gate
• RoHS compliance

应用 Application

• 1−2 Cells Lithium−ion Battery Charging and Discharging Switch in battery protection circuit
• Smartphone\r
• Tablet\r
• Portable equipment

简介

EFC4K110NUZTDG属于分立半导体产品的晶体管-FETMOSFET-阵列。由制造生产的EFC4K110NUZTDG晶体管 - FET，MOSFET - 阵列场效应晶体管 (FET) 是使用电场控制电流流动的电子器件。向栅极端子施加电压会改变漏极端子和源极端子之间的电导率。FET 也称为单极型晶体管，因为其涉及单载流子类型的操作。也就是说，FET 在操作中使用电子或空穴作为载流子，而不是同时使用两者。场效应晶体管通常在低频下显示出极高的输入阻抗。