Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +31.0dBm TYPICAL OUTPUT POWER • 8.5dB TYPICAL POWER GAIN FOR EFA240B AND 10.5dB FOR EFA240BV AT 12GHz • 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY

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EXCELICS

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +31.0dBm TYPICAL OUTPUT POWER • 8.5dB TYPICAL POWER GAIN FOR EFA240B AND 10.5dB FOR EFA240BV AT 12GHz • 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY

文件：39.95 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

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Low Distortion GaAs Power FET

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Low Distortion GaAs Power FET

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DC-4GHz Low Distortion GaAs Power FET

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET•  +31.0dBm TYPICAL OUTPUT POWER\n•  8.5dB TYPICAL POWER GAIN FOR EFA240B AND 10.5dB FOR EFA240BV AT 12GHz\n•  0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE\n•  Si3N4 PASSIVATION\n•  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

Excelics

Low Distortion GaAs Power FET

Excelics

8-12V low distortion GaAs power FET

Excelics

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID RF 天线 描述：RF ANT 2.44GHZ CERAM SMD 100MM

Laird Connectivity Inc.